Cryogenic characteristics of millimetre wavelength Schottky barrier diodes
Abstract
High quality millimetre wavelength Ga As Schottky barrier diodes of various doping levels were measured over the temperature range 12 - 300 K. The temperature dependence of various diode parameters agreed with existing theory. Factors relevant to obtaining optimum low noise performance from a cryogenic mixer utilizing these diodes are discussed. Finally, microwave measurements of mixer performance at 110 GHz are presented, and compared with the theoretical expectations of low temperature operation.
- Publication:
-
7th European Microwave Conference
- Pub Date:
- 1978
- Bibcode:
- 1978eumw.conf..556V
- Keywords:
-
- Cryogenics;
- Gallium Arsenides;
- Microwave Circuits;
- Millimeter Waves;
- Schottky Diodes;
- Temperature Effects;
- Doped Crystals;
- Low Noise;
- Mixers;
- Optimization;
- Performance Prediction;
- Signal Mixing;
- Electronics and Electrical Engineering