A modified Ebers-Moll transistor model for RF interference analysis
Abstract
This paper develops analytical techniques for the study of nonlinear RF and microwave effects in semiconductor devices. Rectification in PN junctions is discussed, and a novel large signal transistor model is developed based upon modifications to standard Ebers-Moll formulations for bipolar transistors. Use of the models in worst case analysis is discussed, with ranges of parameters given based on a simplified analysis of rectification in ideal diodes.
- Publication:
-
International Symposium on Electromagnetic Compatibility
- Pub Date:
- 1978
- Bibcode:
- 1978emc..symp...57L
- Keywords:
-
- Bipolar Transistors;
- Microwave Circuits;
- P-N Junctions;
- Radio Frequency Interference;
- Transistor Circuits;
- Cmos;
- N-P-N Junctions;
- Rectification;
- Semiconductor Diodes;
- Ttl Integrated Circuits;
- Electronics and Electrical Engineering