TEM observations on grain boundaries in sintered silicon, part 1
Abstract
Grain boundaries in silicon with a predetermined orientation were prepared by the sintering of two single crystals. A combination of standard transmission electron microscopy and lattice imaging was used to investigate the structure of the boundaries produced. Low angle grain boundaries on (100) and (111) planes, and twin boundaries on (111) planes are discussed in detail.
- Publication:
-
Cornell Univ. Final Report
- Pub Date:
- September 1978
- Bibcode:
- 1978cuni.reptR....A
- Keywords:
-
- Electron Microscopes;
- Grain Boundaries;
- Silicon;
- Sintering;
- Alignment;
- Crystal Lattices;
- Single Crystals;
- Structural Analysis;
- Solid-State Physics