Characterization and modeling of radiation effects NASA/MSFC semiconductor devices
Abstract
A literature review of the near-Earth trapped radiation of the Van Allen Belts, the radiation within the solar system resulting from the solar wind, and the cosmic radiation levels of deep space showed that a reasonable simulation of space radiation, particularly the Earth orbital environment, could be simulated in the laboratory by proton bombardment. A 3 MeV proton accelerator was used to irradiate CMOS integrated circuits fabricated from three different processes. The drain current and output voltage for three inverters was recorded as the input voltage was swept from zero to ten volts after each successive irradiation. Device parameters were extracted. Possible damage mechanisms are discussed and recommendations for improved radiation hardness are suggested.
- Publication:
-
Final Report Auburn Univ
- Pub Date:
- December 1978
- Bibcode:
- 1978aubu.rept.....K
- Keywords:
-
- Cmos;
- Radiation Damage;
- Semiconductor Devices;
- Space Environment Simulation;
- Spacecraft Electronic Equipment;
- Dosimeters;
- Earth Orbital Environments;
- Extraterrestrial Radiation;
- Integrated Circuits;
- Irradiation;
- Radiation Hardening;
- Communications and Radar