Evaluation of LSI/MSI reliability models
Abstract
A reliability model, adaptable to both MOS and TTL LSI/MSI circuits, is developed. Over 24 million device operating hours of certified data, accumulated during the test-analyze-and-fix/reliability demonstration test of an airborne radar processing system and the accelerated life test of 4K MOS static RAMs, is used to evaluate the authors' reliability model and the LSI/MSI reliability models of MIL-HDBK-217B.
- Publication:
-
Annual Reliability and Maintainability Symposium
- Pub Date:
- 1978
- Bibcode:
- 1978arm..symp..443K
- Keywords:
-
- Circuit Reliability;
- Large Scale Integration;
- Medium Scale Integration;
- Metal Oxide Semiconductors;
- Reliability Analysis;
- Ttl Integrated Circuits;
- Airborne Equipment;
- Data Systems;
- Digital Radar Systems;
- Mathematical Models;
- Radar Equipment;
- Random Access Memory;
- Electronics and Electrical Engineering