Characteristics of the Fermi surface of electrons and holes in narrowband semiconductors

Theoretical and experimental studies were performed on the energy-band structure Pb(1-x)Sn(x)Te solid solutions in an effort to determine the dependence of the parameters of the material on the composition and density of charge carriers. Galvanomagnetic effects were considered for the magnetic-field-strength range of 10-40 kOe. The Shubnikov-de Haas effect in single crystal specimens of the semiconductor is investigated and experimental results are presented on the dependence of the Hall coefficient on magnetic field strength for the range 10-25,000 Oe, on the Hall factor of electrons and holes at a temperature of 4.2 K and on quantum oscillations of the Hall coefficient for weak magnetic fields (10-1000 Oe).