Optical waveguide in GaAlAs-GaAs heterostructure
Abstract
A study of GaAlAs-GaAs heterostructures used to fabricate distributed-feedback lasers is reported. The 1.06-micron mode spectrum measured by means of photoresist gratings is employed to determine the profiles of the heterostructure and 'universal' dispersion curves. The 'universal' dispersion curves are compared with the experimental mode spectrum at 1.15 microns and with the output spectrum; good agreement is obtained in both cases. The heterostructure parameters are calculated for output wavelengths of 1.15 microns, 1.06 microns, and 0.886 micron (at room temperature), as well as 0.836 micron (at liquid-nitrogen temperature).
- Publication:
-
Technical Physics Letters
- Pub Date:
- October 1978
- Bibcode:
- 1978TePhL...4..471B