Electrical properties of epitaxial heterostructures on a zinc sulfide base
Abstract
An investigation is performed on the voltampere, voltfaraday, and photoelectrical characteristics of the epitaxial heterostructures n·ZnSpGe, nZnSpGaAs, and nZnSnSi obtained by the method of vacuum evaporation in a quasiclosed volume. The heterotype structures are rectifying, and the current passage therein is described by the theories of spacechargelimited current. The quantity of surface states N_{s.s}=1.2·10^{12}cm^{2} on the interface of nZnSpGaAs is computed, this being less than the theoretical value by almost two orders of magnitude. The heterostructures nZnSnSi were of two kinds. The voltampere characteristics of the structure of type I are rectifying with a rectification factor of 10^{4} at the 1 V level. The direct current had an exponential dependence and depended weakly on the temperature. The heterostructures had photosensitivity. Their noload voltage was up to 0.2 V. The structures of type II had voltampere characteristics with “double saturation.” Starting from the model of two seriesconnected Schottky diodes, the heights of the barriers were computed for such heterostructures: Eg_{ZnS}=0.8 0.91 eV and E_{Si}=0.66 0.77 eV.
 Publication:

Soviet Physics Journal
 Pub Date:
 July 1978
 DOI:
 10.1007/BF00892052
 Bibcode:
 1978SvPhJ..21..925F