Pressure contact use on high-power semiconductor devices free of thermal fatigue

A procedure for manufacturing semiconductor power devices with pure pressure contact was developed in order to eliminate thermal fatigue. A silicon wafer, covered with a relatively thick metal layer is imbedded with the aid of a soft silver foil between two identically sized hard contact discs (molybdenum or tungsten) which are rotation symmetric. The advantages of this concept show up particularly for large diameters. This pure pressure contact was tested successfully in many devices in a large variety of applications.