The effects of technological parameters in optimizing the electrical properties of Si-thyristors
Abstract
The influences of the technological parameters upon the electrical properties of thyristors were investigated and optimized. The technological parameters of fast switching thyristors for application in deflection circuits in television sets and in electronic circuits of flashlight sets are the emitter geometry, the lateral conductances of the bases, the diffusion profile, the gold diffusion, and the surface centration of the emitter dopant. Electrical properties examined include the amount of turn-off time, firing current and voltage, breakover voltage, forward voltage, and the critical velocities of the increasing currents and voltages.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- September 1978
- Bibcode:
- 1978STIN...7918170K
- Keywords:
-
- Electrical Properties;
- Silicon;
- Switching Circuits;
- Thyristors;
- Charge Carriers;
- Electric Current;
- High Frequencies;
- High Voltages;
- Semiconductor Junctions;
- Trigger Circuits;
- Electronics and Electrical Engineering