High-speed electron-beam lithographic resists for micron and submicron integrated circuits

Next-generation RADAR and ELINT systems are planned to provide the field commander with comprehensive intelligence on the disposition of enemy weapons and electronics equipment. Ultra-compact signal processors with unprecedented capabilities are the heart of these systems. Fabrication of the required high-density integrated circuits (IC's), with elements in the micron to submicron range, is beyond the resolution limit of state-of-the-art optical photolithography. Electrons with 10-20 keV energies can be accurately focused to beam diameters much less than a micron. Electron-beam lithography (EBL) meets the projected resolution requirements, and is expected to be a key technology for the production of sophisticated new digital communications systems for the Army.