Measurement of minority carrier lifetime and diffusion length in silicon epitaxial layers by means of the photocurrent technique
Abstract
A new method for the determination of minority carrier lifetime and diffusion length in thin silicon epitaxial layers was developed. Using a transparent MIS structure the surface recombination velocity was reduced below 25 cm/s. This method makes possible to determine minority carrier lifetime and also diffusion length much greater than the thickness of the epitaxial layer.
- Publication:
-
Solid State Electronics
- Pub Date:
- August 1978
- DOI:
- 10.1016/0038-1101(78)90175-2
- Bibcode:
- 1978SSEle..21..999M
- Keywords:
-
- Carrier Lifetime;
- Electrical Measurement;
- Electron Diffusion;
- Epitaxy;
- Minority Carriers;
- Silicon;
- Thin Films;
- Electric Current;
- Mis (Semiconductors);
- Photoelectric Emission;
- Semiconductor Junctions;
- Solid-State Physics