Solar cell behaviour under variable surface recombination velocity and proposal of a novel structure
Abstract
An experimental method is described which permits measurement of the open-circuit voltage (Voc) and the short-circuit current (Isc) of a solar cell having a variable surface recombination velocity (SRV) at the face opposite to the junction. Therefore, the Isc and Voc for very high SRV such as that of conventional cells, or for very low SRV such as that of a cell using back surface field (BSF), can be experimentally compared using the same cell, thus avoiding sample-to-sample variations. In particular, the double-side illuminated (DSI) cell can be compared to the cited structures and experimental studies can be performed for interdigitated back contact cells. The experimental results for a symmetrical n(plus)-p-n(plus) cell structure suggest a novel low-cost DSI structure consisting of n(plus)-p-p(plus) cell structure in which a metal grid is deposited on both sides for contact. When this cell is illuminated on the face where the n(plus)-p junction is formed, its Voc x Isc product is the same as that of a BSF cell.
- Publication:
-
Solid State Electronics
- Pub Date:
- May 1978
- DOI:
- 10.1016/0038-1101(78)90014-X
- Bibcode:
- 1978SSEle..21..793L
- Keywords:
-
- Minority Carriers;
- N-P-N Junctions;
- Solar Cells;
- Volt-Ampere Characteristics;
- Energy Technology;
- Film Thickness;
- P-N Junctions;
- Silicon Dioxide;
- Energy Production and Conversion