Entirely diffused vertical channel JFET: Theory and experiment
Abstract
The experimental electrical properties of a vertical channel JFET fabricated by a double diffusion technique are presented. A table showing its principal characteristics for different values of the diffusion depths is included. The analysis of the "triodelike" operation revealed by the output characteristics is based on a twodimensional numerical simulation of the device. At high drain currents I_{D} is proportional to V_{DS}^{α} ( α<1). This behaviour can be attributed mainly to the effect of channel length modulation by the drain voltage. At low drain currents, the potential barrier between the source and the drain determines the current magnitude. This is an exponential function of the barrier height which increases almost linearly when V_{GS} increases and decreases nonlinearly when V_{DS} increases.
 Publication:

Solid State Electronics
 Pub Date:
 May 1978
 DOI:
 10.1016/00381101(78)900060
 Bibcode:
 1978SSEle..21..739M
 Keywords:

 Electron Diffusion;
 Field Effect Transistors;
 Power Gain;
 Silicon Transistors;
 VoltAmpere Characteristics;
 Electric Fields;
 Electron Density (Concentration);
 Gates (Circuits);
 Metal Oxide Semiconductors;
 NType Semiconductors;
 Temperature Effects;
 Triodes;
 Electronics and Electrical Engineering