Thermodynamic analysis of the efficiency of semiconductor oscillators

A thermodynamic approach is used to study energy dissipation in semiconductor devices. The rate of free-energy reduction in semiconductors in nonsteady-state conditions is considered and an expression is obtained for the analysis of energy losses caused by thermal diffusion and the release of Joule heat. General formulas are derived and used to analyze the efficiency of such devices as Gunn diodes, avalanche diodes, and transistors. Low-energy-loss modes of operation of such devices are examined.