Prospects for GaAs mosfet integration

In high-speed logic integration with GaAs ICs, Schottky gates present problems due to their high forward-bias current, transferred electron devices due to their high standby-power dissipation, and JFETs due to their minority-carrier storage effects for increased gate voltages. The present paper considers the potential advantages of GaAs MOSFET devices, with special emphasis on the areas in which these devices have advantages over the currently used active components. It is shown that GaAs MOSFETs, especially those fabricated by the new technology of native oxidation of GaAs, should now make contributions to microwave pulse and analog signal processing because of their suitability for integration with good packing densities, low power dissipation, and high speed. Some technological problems remain unsolved, particularly those which are still observed with operation in strong accumulation or inversion.