A simple model is used to represent the t2g band associated with 5d electrons in PrM compounds (M=Bi, Sb, As, Te, Se). The crystal field in PrTe and pressure dependence of the magnetization in PrTe and PrSe can be satisfactorily accounted for within the framework of a negative-point-charge model suggesting that 5d-electron effects are absent. This result is consistent with the band structure deduced from optical measurements on SmTe and SmSe. For PrBi, PrSb, and PrAs, the crystal-field and pressure dependence of the magnetization can be consistently accounted for if we permit the 5d t2g band to overlap the Fermi level and assume a contribution of approximately -8.0 meV per t2g electron below the Fermi level. Comparison is made of this figure with atomic calculations and reasonable agreement is found.