High purity liquid-phase epitaxial indium phosphide for microwave devices

High purity indium phosphide layers were grown using the liquid phase epitaxial technique. These high purity InP layers were achieved by a combination of two factors: using high purity source InP and using indium with a low silicon content. Device applications considered include: Schottky-barriers on InP for field effect transistors; limited space charge accumulation devices for high power, high efficiency oscillators; and p(+)n IMPATT devices for material properties study, e.g., breakdown field and high field carrier velocity.