Weak inversion regime in germanium MOS transistors

Equations are obtained describing the characteristics of MOS transistors in the weak inversion regime where carriers are trapped at surface states with arbitrary energy distributions. An experimental study of weak inversion in germanium MOS transistors is discussed. The I-V characteristics of the transistor are used to determine the energy density distribution of interfacial states of Ge-SiO2. The distribution coincides, within accuracy bounds, with that determined from the temperature dependence of transistor threshold voltage.