Character of the conductivity and irreversible changes in MNOS structures
Abstract
An experiment was conducted to investigate the relationship between the irreversible deformation of the I-V characteristics of MNOS structures induced by the flow of significant charge and the character of charge accumulation in the structure. In such structures the conductivity is found to be electronic in nature, and high-resistance structures exhibit injection currents with Frankel field dependence. A model is proposed in which irreversible changes in the distribution of localized states in silicon nitride are conditioned by the formation of Frankel defects due to change of positions in carrier-trapping ionic lattices.
- Publication:
-
Mikroelektronika
- Pub Date:
- December 1978
- Bibcode:
- 1978Mikro...7..531M
- Keywords:
-
- Charge Carriers;
- Electrical Resistivity;
- Metal-Nitride-Oxide-Silicon;
- Transistors;
- Volt-Ampere Characteristics;
- Carrier Injection;
- Crystal Defects;
- Electric Energy Storage;
- Electrical Measurement;
- Electron Density (Concentration);
- Microstructure;
- P-Type Semiconductors;
- Silicon Nitrides;
- Solid State Physics;
- Electronics and Electrical Engineering