Effect of reverse bias between substrate and channel of a germanium MOS-transistor on effective electron-mobility
Abstract
- Publication:
-
Mikroelektronika
- Pub Date:
- August 1978
- Bibcode:
- 1978Mikro...7..361D
- Keywords:
-
- Electron Mobility;
- Field Effect Transistors;
- Germanium;
- Metal Oxide Semiconductors;
- Bias;
- Channels;
- Dielectrics;
- Substrates;
- Electronics and Electrical Engineering