CMOS reliability

After some general remarks on the reliability of MOS devices as compared to bipolar silicon devices and on the general failure modes and mechanisms of MOS devices, a variety of reliability data on complementary MOS (CMOS) integrated circuits of various types subjected to a number of accelerate-stress life tests are presented. Results of humidty tests on plastic encapsulations are given. CMOS devices processed with gold and titanium in place of the aluminum metallization, in addition to a silicon nitride layer, show increased reliability. The features of an improved electrostatic discharge protection system are described.