New approach for FET oscillator design
Abstract
A design approach to broadband YIG-tuned GaAs FET oscillators is discussed in this paper. A model of a simple YIG oscillator is presented which is characterized by S-parameters. The model is then expanded to a more general form using an FET drain matching technique. Equations are developed to parameterize the matching network impedance in terms of its effect on the oscillator S-parameters, and acceptable drain load regions are determined and plotted on Smith charts.
- Publication:
-
Microwave Journal
- Pub Date:
- October 1978
- Bibcode:
- 1978MiJo...21...59G
- Keywords:
-
- Broadband;
- Field Effect Transistors;
- Microwave Oscillators;
- Network Synthesis;
- Electrical Resistivity;
- Gallium Arsenides;
- Network Analysis;
- Resonators;
- Tuning;
- Yttrium-Iron Garnet;
- Electronics and Electrical Engineering