Radiation effects in semiconductor devices
Abstract
The book examines data on radiation effects in semiconductor devices such as p-n junctions, diodes, laser emitting diodes, bipolar transistors and thyristors, MOS structures, and integrated circuits, and discusses models for explaining these effects. Topics investigated include stable changes in the current-voltage characteristics of p-n junctions under irradiation, effect of radiation on capacitance properties and structure of p-n junctions, effects of radiation on rectifier diodes and Gunn diodes, changes in transistor characteristics caused by surface radiation effects, nonsteady annealing of radiation defects in irradiated silicon transistors, annealing of irradiated MOS structures, and effects of radiation on bipolar and MOS transistor microcircuits. Technological applications of radiation effects are also described, including radiation alloying of semiconductors and controlling the parameters of semiconductor devices by radiation.
- Publication:
-
Minsk Izdatel Nauka i Tekhnika
- Pub Date:
- 1978
- Bibcode:
- 1978MiINT....Q....K
- Keywords:
-
- Radiation Effects;
- Semiconductor Devices;
- Transistor Circuits;
- Alloying;
- Bipolar Transistors;
- Circuit Diagrams;
- Crystal Defects;
- Gallium Arsenides;
- Gunn Diodes;
- Integrated Circuits;
- Light Emitting Diodes;
- Microelectronics;
- P-N Junctions;
- Silicon;
- Thyristors;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering