Interface Growth Feature and Voids in Sapphire Ribbon Crystals
Abstract
The paper is concerned with the voids in sapphire ribbon crystals grown by an edge-defined film-fed growth technique. These voids, which occur when the growth rate is more rapid than usual, are formed by development of a cellular structure of growth interface and by volume change occurring due to solidification of the molten alumina in the cell. Experiments were conducted on crystals grown in an argon atmosphere and pulled at rates from 0.5 to 10.0 mm/min.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- February 1978
- DOI:
- 10.1143/JJAP.17.449
- Bibcode:
- 1978JaJAP..17..449W
- Keywords:
-
- Crystal Growth;
- Sapphire;
- Solid-Solid Interfaces;
- Solidification;
- Vacancies (Crystal Defects);
- Argon;
- Controlled Atmospheres;
- Ribbons;
- Thin Films;
- Solid-State Physics