Hall Effect in Silicon MOS Inversion Layers under Strong Magnetic Fields
Abstract
The channel conductance and the Hall voltage in a wide and a long rectangular samples of n-type MOS inversion layers on Si(100) surfaces are measured in a strong magnetic field of 100 kOe at 1.6 K. A method of transformation from the conductance and the Hall voltage data to the transverse conductivity σxx and the Hall conductivity σxy in arbitrary magnetic field strength based on the Hall-effect field correction are described. The conductivity σxx and σxy are compared with σxx measured directly in a Corbino disk sample and σxy predicted by the quantum transport theory and the electron mobility data. Good agreement is obtained only in the wide sample by the use of a modified Hall-effect field correction. Effects of the electrode resistance, the side edges and the sample geometry are discussed in connection to the modification of the Hall-effect field correction.
- Publication:
-
Journal of the Physical Society of Japan
- Pub Date:
- June 1978
- DOI:
- 10.1143/JPSJ.44.1839
- Bibcode:
- 1978JPSJ...44.1839W
- Keywords:
-
- Hall Effect;
- Magnetic Effects;
- Metal Oxide Semiconductors;
- N-Type Semiconductors;
- Silicon;
- Electrical Resistance;
- Electrical Resistivity;
- Low Temperature;
- Short Circuits;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering