Scattering of keV hydrogen and helium ions and neutrals from oxygen covered surfaces
Abstract
Using a time-of-flight technique, we have measured the energy distributions of hydrogen and helium backscattered from well characterized silicon targets. Silicon single crystal samples were first oxidized to selected depths and then analyzed using Auger depth profiling and MeV He channeling. The energy spectra have been measured and are compared to a computer simulation theory. For the cases considered the oxide layer reduced the reflection coefficient by a maximum of approximately 25% for He and less than half of this amount for H.
- Publication:
-
Journal of Nuclear Materials
- Pub Date:
- October 1978
- DOI:
- 10.1016/0022-3115(78)90171-X
- Bibcode:
- 1978JNuM...76..353R
- Keywords:
-
- Backscattering;
- Helium Ions;
- Hydrogen Ions;
- Ion Scattering;
- Neutral Particles;
- Oxygen;
- Surface Layers;
- Tokamak Devices;
- Auger Spectroscopy;
- Energy Distribution;
- Energy Spectra;
- Oxidation;
- Reflectance;
- Silicon Films;
- Single Crystals;
- Plasma Physics