Recoil implantation from a thin source *1II. Extension to the problems of recoil sputtering and of moderately thick sources
Abstract
We suppose that ions (species 1) are incident on a layer (species 2) near the surface of a splid target (species 3), that the differential scattering crosssection is d σ_{12}, and that the integral depthdistribution function for an atom at depth x' recoiling at angle ψ and stopping beyond depth x is F_{23}( x  x', ψ). The overall integral distribution function for atoms recoilimplanted or recoilsputtered from a thin source located at x' is then given approximately by: H^{(2)}( x  x') α ∞ dσ_{12}F_{23}( x  x'), ψ). We write H(2)>( x  x') to describe recoil implantation, H(2)(∞)  H(2)( x') to describe recoil sputtering, and the appropriate integrals of these with respect to x' to take into account moderately thick sources. Numerical solutions are presented for several mass ratios, M_{3}/ M_{2}, and are applied to three categories of problem relevant to fusion devices. These are bombardment removal of light surface layers, similar experiments with heavy surface layers, and bombardment in general of alloys.
 Publication:

Journal of Nuclear Materials
 Pub Date:
 October 1978
 DOI:
 10.1016/00223115(78)901320
 Bibcode:
 1978JNuM...76..175D
 Keywords:

 Blankets (Fusion Reactors);
 Fusion Reactors;
 Ion Implantation;
 Plasma Interactions;
 Reactor Materials;
 Recoil Atoms;
 Alloys;
 Atom Concentration;
 Distribution Functions;
 Mass Ratios;
 Scattering Cross Sections;
 Sputtering;
 Surface Energy;
 Surface Layers;
 Plasma Physics