Crystal growth of III-V compounds for 1-1.6-micron wavelength region
Abstract
Crystal growth technique was investigated for III-V compounds which are thought to be useful for optical devices in the 1-1.6 micron wavelength region. First, the influence of the lattice mismatch between the epitaxial layer and substrate was studied. Then, a method for growth of a continuously graded layer in the LPE process was developed and layer characteristics were investigated. Double-heterostructure growth of the InP-Ga(x)In(1-x)AsP(1-y) system for the 1.5 micron region and LED fabrication was also reported.
- Publication:
-
Electronics Communications of Japan
- Pub Date:
- October 1978
- Bibcode:
- 1978JElCo..26.1167N
- Keywords:
-
- Crystal Growth;
- Heterojunction Devices;
- Infrared Radiation;
- Light Emitting Diodes;
- Semiconductors (Materials);
- Cleavage;
- Epitaxy;
- Fabrication;
- Gallium Arsenides;
- Gallium Phosphides;
- Indium Arsenides;
- Indium Phosphides;
- Light Sources;
- Substrates;
- Solid-State Physics