IMPATT diodes noise measure
Abstract
A numerical analysis of the small signal noise measure of various types of IMPATT diodes is given by using material parameters which were reexamined recently. Obtained results are in qualitative agreement with the experimental observations that both a GaAs P + N junction diode and a Si N + P one are lower in noise than a Si P + N junction diode.
- Publication:
-
Electronics Communications of Japan
- Pub Date:
- February 1978
- Bibcode:
- 1978JElCo..26..178O
- Keywords:
-
- Avalanche Diodes;
- Electromagnetic Noise Measurement;
- Gallium Arsenides;
- P-N Junctions;
- Silicon Junctions;
- Junction Diodes;
- Noise Spectra;
- Numerical Analysis;
- Signal To Noise Ratios;
- Electronics and Electrical Engineering