Improved performance of GaAs microwave field-effect transistors with low inductance via-connections through the substrate - ADS

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Improved performance of GaAs microwave field-effect transistors with low inductance via-connections through the substrate

Publication:

IEEE Transactions on Electron Devices

Pub Date:

October 1978

DOI:

10.1109/T-ED.1978.19255

Bibcode:

1978ITED...25.1218D

Keywords:

Etching;
Field Effect Transistors;
Gallium Arsenides;
Inductance;
Microwave Circuits;
Power Gain;
Electric Connectors;
Electroplating;
Fabrication;
Gold Coatings;
Metallizing;
Performance Prediction;
Power Amplifiers;
Schottky Diodes;
Substrates;
Electronics and Electrical Engineering

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