A military grade 1024-bit nonvolatile semiconductor RAM
Abstract
The performance and use of a unique metal nitride oxide semiconductor (MNOS) nonvolatile random access memory (RAM) are discussed. Chip operation and characteristics are described which make this device, called the SU110, suitable for a broad range of applications over a range of write times, retention times, and temperature. An example is given of a 2K word by 8-bit nonvolatile semiconductor memory system building block using the SU110.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- August 1978
- DOI:
- 10.1109/T-ED.1978.19224
- Bibcode:
- 1978ITED...25.1061H
- Keywords:
-
- Metal-Nitride-Oxide-Silicon;
- Military Technology;
- Random Access Memory;
- Semiconductor Devices;
- Buffer Storage;
- Chips (Memory Devices);
- Network Synthesis;
- Technology Utilization;
- Electronics and Electrical Engineering