The subthreshold behavior of SOS MOST's
Abstract
The paper develops a simple model describing transconductance in the weak inversion region of SOS MOSTs. Experiments with n- and p-type SOS MOSTs fabricated with epi Si layer thicknesses ranging from 0.1 to 3 microns confirm the predicted decrease in transconductance in weak inversion with decreasing thickness. It is concluded that the epi layer thickness and the high density of fast states at the Si-sapphire interface are the only relevant parameters in explaining the lower transconductance of SOS MOSTs as compared to their counterpart in bulk Si.
- Publication:
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IEEE Transactions on Electron Devices
- Pub Date:
- August 1978
- DOI:
- Bibcode:
- 1978ITED...25..885D
- Keywords:
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- Epitaxy;
- Integrated Circuits;
- Metal Oxide Semiconductors;
- Sos (Semiconductors);
- Thresholds;
- Volt-Ampere Characteristics;
- Capacitance;
- Equivalent Circuits;
- Film Thickness;
- Gates (Circuits);
- Mathematical Models;
- Performance Prediction;
- Semiconducting Films;
- Electronics and Electrical Engineering