A complementary DMOS-VMOS IC structure
Abstract
A new complementary MOS structure has been fabricated consisting of a p-channel DMOS transistor and an n-channel double-diffused VMOS transistor. The transconductance of each transistor was between 0.85-0.98 of the theoretical transconductance. The threshold voltages have been adjusted by either ion implantation or by adjusting the diffusion profiles. The inverter operation is similar to that of standard CMOS.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- July 1978
- DOI:
- 10.1109/T-ED.1978.19185
- Bibcode:
- 1978ITED...25..848J
- Keywords:
-
- Integrated Circuits;
- Inverters;
- Metal Oxide Semiconductors;
- Transistors;
- Fabrication;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering