A 2-watt X-band silicon power transistor
Abstract
A silicon power transistor for use at X-band has been developed utilizing e-beam lithography and ion implantation. The transistor has a bar size of 0.5 x 1 sq mm and consists of four 27.5 x 75 sq micron active cells. With a specially designed package, the combined output power of four cells operating at common base Class C mode is nearly 2 W CW at 8 GHz and almost 1.5 W CW at 10 GHz.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- June 1978
- Bibcode:
- 1978ITED...25..731Y
- Keywords:
-
- Electron Beams;
- Ion Implantation;
- Microwave Amplifiers;
- Power Conditioning;
- Silicon Transistors;
- Superhigh Frequencies;
- Amplifier Design;
- Continuous Radiation;
- Fabrication;
- Impedance Matching;
- Lithography;
- Power Efficiency;
- Power Gain;
- Electronics and Electrical Engineering