Ion-implanted planar-mesa IMPATT diodes for millimeter wavelengths
Abstract
A combination of planar and mesa-etch techniques has been used to fabricate IMPATT diodes with complete junction passivation, defined diode geometries, and precise parasitics control. The fabrication technique, which relies on ion-implantation doping, yields IMPATT diodes with sufficient mechanical strength to permit direct mounting into microwave circuits. Degradation in microwave performance as a function of passivation parasitics is estimated for a simple diode-circuit interaction model. Degradation factors of about 50% are found for fully passivated IMPATT diodes produced for operation in the 50- to 75-GHz band.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- June 1978
- DOI:
- 10.1109/T-ED.1978.19159
- Bibcode:
- 1978ITED...25..714L
- Keywords:
-
- Avalanche Diodes;
- Ion Implantation;
- Microwave Circuits;
- Millimeter Waves;
- Doped Crystals;
- Fabrication;
- Mesas;
- Performance Prediction;
- Schottky Diodes;
- Varactor Diodes;
- Electronics and Electrical Engineering