Comprehensive models for the analysis of high-efficiency GaAs IMPATT's
Abstract
A computer simulation of high-efficiency GaAs IMPATT diodes demonstrates the importance of thermal transients, premature collection tuning jump, charge-limited domains and back-bias (rectification). The computer simulation treats dc, small-signal, and large-signal avalanche diode operation. The simulation results reveal the particular significance of thermal effects in high-efficiency IMPATT diodes. A graphical representation of characteristics of the high-efficiency devices is developed as a design aid.
- Publication:
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IEEE Transactions on Electron Devices
- Pub Date:
- June 1978
- DOI:
- Bibcode:
- 1978ITED...25..674B
- Keywords:
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- Avalanche Diodes;
- Computerized Simulation;
- Gallium Arsenides;
- Mathematical Models;
- Current Density;
- Design Analysis;
- Direct Current;
- Efficiency;
- Electric Fields;
- Frequency Response;
- Graphs (Charts);
- Radio Frequencies;
- Temperature Effects;
- Electronics and Electrical Engineering