GaAs microwave MOSFET's
Abstract
A low-temperature magnetically controlled plasma-oxidation method has been employed for the fabrication of GaAs microwave MOSFETs having plasma-grown native oxides as gate insulators. Testing has shown that maximum frequency of oscillation is 13 GHz in the enhancement device. The maximum frequency of oscillation is found to be 22 GHz for a medium-power depletion device with a 1.8-micron gate length. The depletion MOSFET microwave power capability is found to be very good, even under zero gate-bias conditions. The large frequency dispersion of transconductance observed in the 10-100 kHz range is attributed to interface states at the GaAs-native oxide interface.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- June 1978
- DOI:
- Bibcode:
- 1978ITED...25..573M
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Magnetic Control;
- Metal Oxide Semiconductors;
- Microwave Oscillators;
- Volt-Ampere Characteristics;
- Depletion;
- Gates (Circuits);
- Low Temperature;
- Oxidation;
- Plasma Interactions;
- Power Conditioning;
- Electronics and Electrical Engineering