A two-level polysilicon-gate technology was employed for the fabrication of the test devices used in the described investigation. The thickness of the oxide film was 60 nm. For the development of the SCCD measurement technique, it was necessary to compute the dependence of the total leading edge losses on the fast interface state density. Typical values obtained by the new method are presented in a table. The values are in agreement with those measured near midgap with the conductance method reported by Nicollian and Goetzberger. The new method is compared with other SCCD specific measurement techniques. It is found that the values obtained with the aid of the considered method show the smallest departure from the data obtained by the conductance technique. The good agreement is related to a consideration of the dependence of the quasi-Fermi level upon the number of charge transfers.