The crystal growth of layered semiconductor InSe and its electrical and optical properties
Abstract
A study is made of crystal growth in layered semiconductor indium selenide and its electrical and optical properties. The investigation is based on specific heat measurement, X-ray analysis, electrical conductivity, and dielectric-constant measurements. The specimens are evaluated under a variety of conditions including between room temperature and the melting point, during pumping by a vacuum rotary pump, and under vacuum pumping above 360 C. Using the results of these experiments monophase InSe crystals are obtained and the optical properties are identified for room temperatures and for liquid N2 temperatures.
- Publication:
-
Hokkaido University Faculty Engineering Bulletin
- Pub Date:
- February 1978
- Bibcode:
- 1978HUFEB......113I
- Keywords:
-
- Crystal Growth;
- Electrical Properties;
- Indium Compounds;
- Optical Properties;
- Selenides;
- Semiconductors (Materials);
- Electrical Resistivity;
- Melting Points;
- Performance Tests;
- Permittivity;
- Specific Heat;
- Temperature Effects;
- Vacuum Pumps;
- X Ray Analysis;
- Solid-State Physics