Further investigation of RF gain degradation in high-power microwave transistors under multicarrier operation
Abstract
The use of RF transistor power amplifiers under multicarrier operating conditions can result in RF gain degradation due to the high instantaneous voltage levels occurring in the emitter-base junction. This paper describes a further series of RF experiments with computer predictions based on linearized amplifiers to determine the reverse emitter-base stress levels and associated static gain/RF gain degradations for various linearizing resistances in the associated amplifier linearizing networks.
- Publication:
-
ESA Journal
- Pub Date:
- 1978
- Bibcode:
- 1978ESAJ....2..207G
- Keywords:
-
- Linear Amplifiers;
- Microwave Circuits;
- Power Gain;
- Transistor Amplifiers;
- Circuit Diagrams;
- Computerized Simulation;
- Prediction Analysis Techniques;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering