Effect of consecutive high-temperature treatments in inert and oxidative media on the distribution profiles of ion-implanted impurities in silicon
Abstract
- Publication:
-
Bulgarian Journal of Physics
- Pub Date:
- 1978
- Bibcode:
- 1978BlJPh...5...71P
- Keywords:
-
- Doped Crystals;
- Heat Treatment;
- Ion Implantation;
- Metal Oxide Semiconductors;
- Semiconductors (Materials);
- Silicon Junctions;
- High Temperature;
- Impurities;
- Inert Atmosphere;
- Ion Distribution;
- Numerical Analysis;
- Oxidation;
- P-Type Semiconductors;
- Silicon Dioxide;
- Temperature Effects;
- Solid-State Physics