Grain size dependence in a self-implanted silicon layer on laser irradiation energy density
Abstract
The transformation of amorphous Si layers to polycrystalline material induced by Q-switched ruby laser single pulses of 20 and 50 nsec duration has been investigated. The analysis has been performed by transmission electron microscopy and by channeling measurements using 2.0-MeV He+ Rutherford backscattering. The average grain size of the polycrystalline layers increases with the incident energy density of the laser pulse in the range 0.6-1.7 J/cm2. A transition to single-crystal layers is found for incident energy densities around 2.0 J/cm2. The grain size correlates with incident energy density (J/cm2) rather than incident power density (MW/cm2) for these pulse durations.
- Publication:
-
Applied Physics Letters
- Pub Date:
- June 1978
- DOI:
- 10.1063/1.89938
- Bibcode:
- 1978ApPhL..32..824T
- Keywords:
-
- Amorphous Semiconductors;
- Electron Microscopy;
- Polycrystals;
- Q Switched Lasers;
- Silicon;
- Size Determination;
- Backscattering;
- Diffraction Patterns;
- Microstructure;
- Recrystallization;
- Ruby Lasers;
- Single Crystals;
- Solid-State Physics;
- 64.70.Kb;
- 79.20.Ds;
- 81.30.Hd;
- 68.55.+b;
- Solid-solid transitions;
- Laser-beam impact phenomena;
- Constant-composition solid-solid phase transformations: polymorphic massive and order-disorder