On-time determination of the composition of III-V ternary layers during VPE growth
Abstract
A fast automatic ellipsometer has been used for determining the composition (and the rate of growth in favorable cases) of III-V ternary compound semiconductor layers during their growth in a VPE reactor. The technique is demonstrated on Ga1-xAlxAs and GaAs1-xPx layers grown respectively in an organometallic and a chloride system. The elllipsometric angle ψ is shown to be directly related to the composition and the rate of growth of the layer. The ellipsometric angle Δ contains additional information on the growth mechanisms at the surface of the layer.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 1978
- DOI:
- 10.1063/1.90136
- Bibcode:
- 1978ApPhL..32..576T
- Keywords:
-
- Ellipsometers;
- Epitaxy;
- Gallium Arsenides;
- Semiconducting Films;
- Ternary Alloys;
- Aluminum Alloys;
- Chlorides;
- Gallium Phosphides;
- Group 3a Compounds;
- Group 5a Compounds;
- Organometallic Compounds;
- Vapor Phases;
- Solid-State Physics;
- 68.55.+b;
- 81.15.Gh;
- 78.65.Jd;
- Chemical vapor deposition