Electron beam semiconductor L-band amplifier
Abstract
An EBS L-Band amplifier has been developed with characteristics making it ideally suited for IFF power amplification applications. These include high peak output power, high gain, high reliability and small size. Devices were tested at up to 1000 W peak at 1% duty and 1500 watts peak output power at 0.1% duty, with 23 db gain, a 50 MHz bandwidth and a 50% target efficiency. The diode source impedance of 3 ohms is transformed by a quarter wave cavity up to a 50 ohm output impedance.
- Publication:
-
Final Report
- Pub Date:
- July 1977
- Bibcode:
- 1977wjc..rept.....B
- Keywords:
-
- Electron Beams;
- Semiconductor Devices;
- Ultrahigh Frequencies;
- Diodes;
- Oscillators;
- Power Gain;
- Radio Frequency Shielding;
- Electronics and Electrical Engineering