MNOS BORAM manufacturing methods and technology project
Abstract
A manufacturing methods project has been initiated to establish a pilot production line for metal nitride oxide semiconductors (MNOS) block oriented random access memory (BORAM) multichip hybrid circuits. During the past quarter the first set of engineering samples were delivered, and fabrication of the second set was initiated. Further experience was gained with a new low cost MNOS BORAM die. Hybrid circuit and memory card development progressed. In addition, transistor endurance testing concepts were explored.
- Publication:
-
Quarterly Progress Report
- Pub Date:
- March 1977
- Bibcode:
- 1977wdes.reptQ....B
- Keywords:
-
- Computer Storage Devices;
- Hybrid Circuits;
- Metal-Nitride-Oxide-Silicon;
- Random Access Memory;
- Integrated Circuits;
- Microelectronics;
- Production Engineering;
- Electronics and Electrical Engineering