Electrical properties of Pbo.8Sno.2Te Epitaxial films
Abstract
The temperature dependences of the Hall coefficient and resistivity of Pb0.8 SnO2 Te epitaxial films have been measured from 4.2 to 300 K. The results show that no appreciable strain is induced in the epitaxial films grown on Ba F2 substrates because of differential thermal contraction below room temperature.
- Publication:
-
Final Report Naval Surface Weapons Center
- Pub Date:
- December 1977
- Bibcode:
- 1977vswc.reptR....L
- Keywords:
-
- Electrical Properties;
- Lead Tellurides;
- Semiconductors (Materials);
- Tin;
- Barium Compounds;
- Epitaxy;
- Hall Effect;
- Thermal Stresses;
- Transport Properties;
- Electronics and Electrical Engineering