Fast low power ESFI MOS circuits
Abstract
Several logic and memory circuits were designed and investigated in ESFI-SOS technology (epitaxial Si-films on insulators; silicon-on-sapphire) to determine speed, power, and packing density. For a basic Al-gate process design rules were defined. Inverter showed propagation delays down to 250 ps and power-delay products to about 20 fJ. The experimental results indicate it should be possible to implement ESFI-SOS circuits with more than 1000 gates (LSI) at operating frequencies of 100 MHz.
- Publication:
-
Final Report Siemens A.G
- Pub Date:
- December 1977
- Bibcode:
- 1977siem.rept.....P
- Keywords:
-
- Integrated Circuits;
- Large Scale Integration;
- Logic Circuits;
- Crystal Structure;
- Dissipation;
- Electric Generators;
- Epitaxy;
- Packing Density;
- Sapphire;
- Silicon;
- Switching Circuits;
- Velocity;
- Electronics and Electrical Engineering