An expression is obtained for the static noise-immunity of a CMOS-transistor gate connected in series with a number of other gates of identical characteristics. It is found that the value of static noise-immunity is determined primarily by the base parameters (p-type and n-type threshold voltages) of the two transistors and by feed voltage. The noise immunity has a nonzero value even when the threshold voltages are both equal to zero. Maximum noise-immunity is obtained on the basis of a transistor-channel-width optimality criterion.
Microelectronics and semiconductor devices. Number 2
- Pub Date:
- Gates (Circuits);
- Signal To Noise Ratios;
- Transistor Circuits;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering