A numerical model for thermal second breakdown in diodes
Abstract
A numerical diode model for simulation of thermal second breakdown is developed. The model features one-dimensional electrical effects and two-dimensional thermal conduction along with thermally dependent semiconductor parameters. A contact-to-contact transient simulation is performed for a constant temperature header, or heat sink. The simulation yields the voltage transient characteristic of thermal second breakdown in diodes for an overstress reverse bias current pulse.
- Publication:
-
Imaginative Engineering thru Education and Experience
- Pub Date:
- 1977
- Bibcode:
- 1977ieee.conf..475C
- Keywords:
-
- Avalanche Diodes;
- Electrical Faults;
- Mathematical Models;
- Semiconductor Devices;
- Thermal Degradation;
- Bias;
- Electron Density (Concentration);
- Temperature Effects;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering